絲印：305；Package：SOT-23；20V N-Channel PowerTrench MOSFET

General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features ? 0.9 A, 20 V RDS(ON) = 220 m? @ VGS = 4.5 V RDS(ON) = 300 m? @ VGS = 2.5 V ? Low gate charge ? Fast switching speed ? High perfo

文件：172.56 Kbytes 頁數：5 Pages

FAIRCHILD

仙童半導體

絲?。?a target="_blank" title="Marking" href="/305/marking.html">305；Package：SOT-23；N-Channel 20 V (D-S) MOSFET

Features VDS (V) = 20V RDS(ON)

文件：457.97 Kbytes 頁數：5 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/305/marking.html">305；Package：SOT-23；N-Channel 20 V (D-S) MOSFET

Applications Load switch Battery protection Power management Features VDS (V) = 20V RDS(ON)

文件：364.03 Kbytes 頁數：5 Pages

EVVOSEMI

翊歐

N 溝道，PowerTrench? MOSFET，20V，0.9A，220mΩ

該20V N溝道MOSFET采用飛兆高壓PowerTrench工藝制成。 已針對電源管理應用進行了優(yōu)化。 ?0.9 A, 20 V\n?RDS(ON) = 220 mΩ @ VGS = 4.5 V\n?RDS(ON) = 300 mΩ @ VGS = 2.5 V\n?低柵極電荷\n?快速開關速度\n?高性能溝道技術可實現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導體