N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：250.61 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET 530V, 4A, 1.5Ω

ONSEMI

安森美半導(dǎo)體

N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：250.61 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：72.16 Kbytes 頁(yè)數(shù)：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD N CHANNEL MOS FIELD

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEA

文件：1.03572 Mbytes 頁(yè)數(shù)：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：1.03642 Mbytes 頁(yè)數(shù)：6 Pages

KEC

KEC(Korea Electronics)