400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：726.67 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，UniFETTM，400V，2A，3.4?，IPAK

UniFETTMMOSFET 是飛兆半導(dǎo)體的高壓 MOSFET 系列產(chǎn)品，基于平面條形技術(shù)和 DMOS 技術(shù)。該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開(kāi)關(guān)性能和更高的雪崩能量強(qiáng)度。該器件系列適用于開(kāi)關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正(PFC)、平板顯示器(FPD)電視電源、ATX 及燈用電子鎮(zhèn)流器。 ?RDS(on) = 3.4? （最大值）@ VGS = 10V, ID = 1A柵極電荷低（典型值：4.5nC)\n?低 Crss（典型值3.7pF)\n?100% 經(jīng)過(guò)雪崩擊穿測(cè)試\n?100% avalanche tested;

ONSEMI

安森美半導(dǎo)體

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：726.67 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

400V N-Channel MOSFET

文件：733.83 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：717.46 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.03 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電