N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These p

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FAIRCHILD

仙童半導(dǎo)體

N 溝道增強型場效應(yīng)晶體管，30V，6.5A，35mΩ

這些N溝道增強模式功率場效應(yīng)晶體管采用飛兆半導(dǎo)體專有的高單元密度DMOS技術(shù)生產(chǎn)。 這種密度非常高的工藝是專為最大限度地降低通態(tài)電阻并提供卓越開關(guān)性能而定制的。 此類產(chǎn)品非常適合低電壓、低電流應(yīng)用，例如筆記本電腦電源管理、電池供電電路和DC電機控制。 ?6.5 A，30 V。 RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V\n?高密度設(shè)計可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力，采用廣泛使用的表面貼裝封裝;

ONSEMI

安森美半導(dǎo)體

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

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ZETEX

500V Silicon NPN high voltage switching transistor

文件：236.93 Kbytes 頁數(shù)：6 Pages

ZETEX

Silicon NPN High Voltage Switching Transistor

■ Features ● 6V reverse blocking capability ● Low saturation voltage - 90mV @ 50mA ● IC=150mA continuous

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KEXIN

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