30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs

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FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/458p/marking.html">458P；30V P-Channel PowerTrench? MOSFET

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs

文件：261.13 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

-30V P溝道PowerTrench? MOSFET

該P溝道MOSFET特別為提高DC/DC轉(zhuǎn)換器的整體效率而設(shè)計，采用同步或傳統(tǒng)開關(guān)脈寬調(diào)制(PWM)控制器及電池充電器。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 ?3.4 A, -30 V\n?RDS(ON) = 130 mΩ @ VGS = 10 V\n?RDS(ON) = 200 mΩ @ VGS = 4.5 V\n?快速開關(guān)速度\n?低柵極電荷（2.5nC典型值）\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?采用廣泛使用的表面貼裝封裝，具有高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

Antenna

文件：136.26 Kbytes 頁數(shù)：5 Pages

RFSOLUTIONS

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO

文件：130.19 Kbytes 頁數(shù)：2 Pages

ZETEX

High Voltage Transistor

Features ● 400 Volt VCEO

文件：36.23 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子