Complementary

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited

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FAIRCHILD

仙童半導(dǎo)體

互補，PowerTrench? MOSFET，20V

這些雙N和P溝道增強模式功率場效應(yīng)晶體管采用飛兆半導(dǎo)體先進的PowerTrench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ? Q1： -6.5A、-20V\n? RDS(ON) = 43 mΩ @ VGS = 2.5 VQ2： -5A、-20V;

ONSEMI

安森美半導(dǎo)體

Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

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MICROSEMI

美高森美

High-Precision, Low-Voltage, Current-Sense Amplifier with Current Output and Chip Select for Multiplexing

General Description The MAX9934** high-precision, low-voltage, high-side current-sense amplifier is ideal for both bidirectional (charge/discharge) and unidirectional current measure ments in battery-powered portable and laptop devices. Input offset voltage (VOS) is a low 10μV (max) at +25°C ac

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MAXIM

美信

Fully Assembled and Tested

文件：921.43 Kbytes 頁數(shù)：6 Pages

MAXIM

美信