Dual N-Channel 2.5V Specified PowerTrench MOSFET

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FAIRCHILD

仙童半導(dǎo)體

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05723 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

雙 P 溝道，2.5V 指定，PowerTrench? MOSFET，-20V，-3.8A，75mΩ

這些P溝道2.5V額定MOSFET采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?-3.8A、-20V RDS(on) = 0.075 Ω @ VGS = -4.5V RDS(on) = 0.105 Ω @ VGS = -2.5 V\n?低柵極電荷（7nC典型值）\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的rDS(on)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

Dual P-Channel 2.5V Specified PowerTrench? MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well

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FAIRCHILD

仙童半導(dǎo)體

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05717 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

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MICROSEMI

美高森美