Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features · –5.3 A, –30 V RDS(ON) = 50

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FAIRCHILD

仙童半導(dǎo)體

P-Channel 30-V (D-S) MOSFET

文件：961.34 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

P 溝道，PowerTrench? MOSFET，30V，-5.3A，50mΩ

此P溝道MOSFET是采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)的穩(wěn)固柵極版本。 它已針對需要大范圍柵極驅(qū)動電壓額定值(4.5V – 25V)的電源管理應(yīng)用進(jìn)行了優(yōu)化。 ?-5.3 A, -30 V\n?RDS(ON) = 50 mΩ @ VGS = -10 V\n?RDS(ON) = 80 mΩ @ VGS = - 4.5 V。\n?低柵極電荷\n?快速開關(guān)速度\n?采用高密度單元設(shè)計(jì)，可實(shí)現(xiàn)極低的RDS(ON)。\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

P-Channel 30-V (D-S) MOSFET

文件：961.33 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ9435Q uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. APPLICATIONS Battery S

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GWSEMI

唯圣電子

High Power and current handing capability

文件：335.86 Kbytes 頁數(shù)：6 Pages

FS