30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features ? –3.4 A, –30 V RDS(ON) = 130 m? @ VG

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FAIRCHILD

仙童半導(dǎo)體

P-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

P 溝道，PowerTrench? MOSFET，30V，-3.4A，130mΩ

此P溝道MOSFET是采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)的穩(wěn)固?hào)艠O版本。 它已針對(duì)需要大范圍柵極驅(qū)動(dòng)電壓額定值(4.5V – 25V)的電源管理應(yīng)用進(jìn)行了優(yōu)化。 ?-3.4 A, -30 V\n?RDS(on) = 130 mΩ@ VGS = -10 V\n?RDS(on) = 200 mΩ @ VGS = -4.5 V\n?低柵極電荷（2.4nC，典型值）\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的 RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications

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INFINEON

英飛凌

RF AMPLIFIER MODEL

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APITECH

ingress protected

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