Dual N-Channel Logic Level PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage

文件：342.88 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PowerTrench? MOSFET

文件：544.78 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

雙 N 溝道，PowerTrench? MOSFET，邏輯電平，40V，6A，29mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進的Power Trench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導(dǎo)通電阻并保持卓越開關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?最大RDS(on) = 29mΩ @ VGS = 10V\n?最大RDS(on) = 36mΩ @ VGS = 4.5V\n?低柵極電荷\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Dual N-Channel Logic Level PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage

文件：544.78 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PowerTrench? MOSFET

文件：544.78 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel 60 V (D-S) 175 ?C MOSFET

文件：1.09101 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

雙 N 溝道，邏輯電平，PowerTrench? MOSFET，40V，6A，29mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進的PowerTrench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?最大 rDS(ON) = 29 m? (VGS = 10 V)\n?最大rDS(ON) = 36m? @VGS = 4.5V\n?低柵極電荷\n?高性能溝道技術(shù)可實現(xiàn)極低的 rDS(ON)\n?高功率和高電流處理能力\n?符合 AEC Q101 標(biāo)準(zhǔn)\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體