Dual N-Channel Enhancement Mode Field Effect Transistor

文件：269.54 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：330.73 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

Si8935/36/37 Delta-Sigma Modulator for Voltage Measurement

Features ? 0 to 2.5 V nominal input voltage ? Modulator clock options - External clock up to 25 MHz (Si8935) - 10 MHz internal clock (Si8936) - 20 MHz internal clock (Si8937) ? Typical input offset: ±0.4 mV ? Typical gain error: ±0.05 ? Excellent drift specifications - ±0.5 μV/°C typical

文件：1.52094 Mbytes 頁數(shù)：28 Pages

SKYWORKS

思佳訊

Si8935/36/37 Delta-Sigma Modulator for Voltage Measurement

Features ? 0 to 2.5 V nominal input voltage ? Modulator clock options - External clock up to 25 MHz (Si8935) - 10 MHz internal clock (Si8936) - 20 MHz internal clock (Si8937) ? Typical input offset: ±0.4 mV ? Typical gain error: ±0.05 ? Excellent drift specifications - ±0.5 μV/°C typical

文件：1.52094 Mbytes 頁數(shù)：28 Pages

SKYWORKS

思佳訊