絲?。?strong>FDS6990A；Dual N-Channel Logic Level PowerTrenchò MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

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Dual N-Channel Logic Level PowerTrenchTM MOSFET

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Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge.Each MOSFET includes integrated Schottky diode

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Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge.Each MOSFET includes integrated Schottky diode

文件：542.06 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

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Dual 30V N-Channel PowerTrench SyncFET

文件：899.95 Kbytes 頁數(shù)：8 Pages

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Dual 30V N-Channel PowerTrench SyncFET

文件：899.95 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

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雙 N 溝道，邏輯電平，PowerTrench? MOSFET，30V，7.5A，18mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?7.5 A, 30 V\n?RDS(ON) = 18 mΩ @ VGS = 10 V\n?RDS(ON) = 23 mΩ @ VGS = 4.5 V\n?快速開關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力;

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雙 N 溝道，PowerTrench? SyncFET?，30V，7.5A，22mΩ

FDS6990AS設(shè)計(jì)用于替代同步DC:DC電源中的一個(gè)雙SO-8 MOSFET和兩個(gè)肖特基二極管。 此30V MOSFET設(shè)計(jì)用于最大限度地提高功率轉(zhuǎn)換效率，提供低RDS(ON)和低柵極電荷。 每個(gè)MOSFET都包含使用飛兆半導(dǎo)體單片SyncFET技術(shù)的集成肖特基二極管。 FDS6990AS在同步整流器中作為低端開關(guān)的性能與FDS6990A并聯(lián)一個(gè)肖特基二極管的性能相似。 ?7.5 A，30 V。 RDS(ON) = 22 mΩ @ VGS = 10V RDS(ON) = 28 mΩ @ VGS = 4.5V\n?包含SyncFET肖特基體二極管\n?低柵極電荷（10nC典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

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