Dual N-Channel Logic Level PowerTrenchTM MOSFET

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FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PowerTrench? MOSFET

General Description\nThese N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching\nperformance. These devices are well suited for low voltage and 3.5 A, 30 V. RDS(ON) = 0.090 W @ VGS = 10 V\n???????????????? RDS(ON) = 0.140 W @ VGS = 4.5 V.\nFast switching speed.\nLow gate charge (2.1nC typical).\nHigh performance trench technology for extremely low RDS(ON).\nHigh power and current handling capability.;

ONSEMI

安森美半導(dǎo)體

Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：241.1 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

雙 N 溝道邏輯電平 PowerTrench? MOSFET 30V，3.5A，90mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開(kāi)關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開(kāi)關(guān)的低電壓和電池供電應(yīng)用。 ?3.5 A，30 V。 VGS = 10 V時(shí)，RDS(ON) = 0.090 Ω；VGS = 4.5 V時(shí)，RDS(ON) = 0.140 Ω\n?快速開(kāi)關(guān)速度\n?低柵極電荷（2.1nC，典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體