Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

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ONSEMI

安森美半導(dǎo)體

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage an

文件：195.22 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：164.75 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

Dual N-channel Enhancement Mode Power MOSFET

Features ? VDS= 30V, ID= 6.5 A RDS(ON)

文件：710.18 Kbytes 頁(yè)數(shù)：5 Pages

BYCHIP

百域芯

Dual N-Channel Logic Level PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：532.92 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PowerTrench? MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：199.36 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

雙 N 溝道，邏輯電平，PowerTrench? MOSFET，30V，5.5A，40mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開(kāi)關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開(kāi)關(guān)的低電壓和電池供電應(yīng)用。 ?5.5 A，30 V。 RDS(ON) = 0.040 Ω @ VGS = 10 V，RDS(ON) = 0.055 Ω @ VGS = 4.5 V。\n?開(kāi)關(guān)速度快。\n?低柵極電荷（典型值5 nC）。\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力。;

ONSEMI

安森美半導(dǎo)體

雙 N 溝道，邏輯電平，PowerTrench? MOSFET，30V，5.5A，38mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)阻抗并保持卓越開(kāi)關(guān)性能而定制的。這些器件非常適合需要線路內(nèi)低功率損耗和快速開(kāi)關(guān)的低電壓和電池供電應(yīng)用。 ?5.5A，30V\n?RDS(ON) = 38 mΩ @ VGS = 10V\n?RDS(ON) = 50 mΩ @ VGS = 4.5V\n?快速開(kāi)關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體