Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：77.72 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：332.48 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：332.48 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

文件：332.48 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

雙 N 溝道，邏輯電平，PWM 優(yōu)化，PowerTrench? MOSFET，20V，9.4A，14mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?9.4 A, 20 V\n?RDS(ON) = 14 mΩ @ VGS = 4.5 V\n?RDS(ON) = 18 mΩ @ VGS = 2.5 V\n?低柵極電荷（16nC，典型值）\n?靜電放電(ESD)保護(hù)二極管（注3）\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

20 V、9.4 A、10 mΩ、SO-8，邏輯電平雙通道 N 溝道 PowerTrench?

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?9.4 A、20 V、RDS(ON) = 14 m?（VGS = 4.5 V）\n?低柵極電荷（16nC，典型值）\n?靜電放電(ESD)保護(hù)二極管（注3）\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力\n?符合 AEC Q101 標(biāo)準(zhǔn)\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體