30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ● 12 A, 30

文件：62.16 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N-Channel PowerTrench MOSFET

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench MOSFET 30V, 9A, 11.5mOhm

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ■ RDS(ON)

文件：290.94 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 30V, 9A, 11.5m廓

文件：464.54 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N溝道PowerTrench? MOSFET

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 已針對低柵極電荷、低rDS(ON) 和高速開關(guān)進(jìn)行了優(yōu)化。 ?RDS(ON) = 11.5mΩ，VGS = 10V，ID = 9A\n?RDS(ON) = 14.5mΩ，VGS = 4.5V，ID = 8.2A\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?低柵極電荷\n?高功率和高電流處理能力\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體