N-Channel 30-V (D-S) MOSFET

Application ? Reverse Battery protection ? Load switch o Power management PWM Application

文件：2.25877 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

30V N-Channel PowerTrench SyncFET?

General Description The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode

文件：262.86 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

Dual-Synchronous, Step-Down Controller with Out-of-Audio??Operation and 100-mA LDOs for Notebook System Power

文件：909.28 Kbytes 頁數(shù)：33 Pages

TI

德州儀器

N 溝道，PowerTrench? SyncFET?，30V，10A，12mΩ

FDS6690AS設計用于替代同步DC:DC電源中的一個單SO-8 MOSFET和肖特基二極管。 此30V MOSFET設計用于最大限度地提高功率轉換效率，提供低RDS(ON)和低柵極電荷。 FDS6690AS包含使用飛兆半導體單片SyncFET技術的集成肖特基二極管。 FDS6690AS在同步整流器中作為低端開關的性能與FDS6690A并聯(lián)一個肖特基二極管的性能相似。 ?10A，30V\n?RDS(ON) = 12 mΩ @ VGS = 10V\n?RDS(ON) = 15 mΩ @ VGS = 4.5V\n?包含SyncFET肖特基體二極管\n?低柵極電荷（典型值16 nC）。\n?高性能溝道技術可實現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力;

ONSEMI

安森美半導體

30V N-Channel PowerTrenchò SyncFET?

General Description\nThe FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode u ? 10 A, 30 V.\n?? RDS(ON) = 0.016 W @ VGS = 10 V\n?? RDS(ON) = 0.024 W @ VGS = 4.5 V\n? Includes SyncFET Schottky diode\n? Low gate charge (11 nC typical)\n? High performance trench technology for extremely low\n?? RDS(ON)\n? High power and current handling capabilityApplications\n? DC/DC converter\;

ONSEMI

安森美半導體