絲?。?strong>FDS6682；Package：SOP-8；30V N-Channel MOSFET

Features · Low gate charge (22 nC typical) · High performance trench technology for extremely low RDS(ON) · High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 14 A RDS(ON)

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UMW

友臺(tái)半導(dǎo)體

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

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FAIRCHILD

仙童半導(dǎo)體

30V N-Channel PowerTrench MOSFET

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FAIRCHILD

仙童半導(dǎo)體

30V N溝道PowerTrench? MOSFET

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計(jì)的。 該器件針對(duì)“低端”同步整流器工作進(jìn)行了優(yōu)化，采用小型封裝提供一個(gè)極低的RDS(ON)。 ?14 A，30 V。\n?RDS(ON) = 7.5 mΩ @ VGS = 10 V\n?RDS(ON) = 9.0 mΩ @ VGS = 4.5 V\n?低柵極電荷（22nC，典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

30V N-Channel PowerTrench MOSFET

文件：119.48 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體