40V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features ■–8.2 A, –40 V RDS(ON)= 0.027

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FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/p16ty/marking.html">P16TY；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Application ● High power and current handing capability ● Lead free product is acquired ● Surface mount package

文件：3.52988 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

40V，P 溝道，PowerTrench? MOSFET，-8.2A，27mΩ

此P溝道MOSFET是采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)的穩(wěn)固柵極版本。 已針對要求大范圍柵極驅(qū)動電壓額定值(4.5V-20V)的功率管理應(yīng)用進行了優(yōu)化。 ?-8.2A, -40V\n?RDS(ON) = 0.027 mΩ @ VGS = -10V\n?RDS(ON) = 0.035 mΩ @ VGS = -4.5V\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

P-Channel 40 V (D-S) MOSFET

文件：1.02499 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體