P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

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FAIRCHILD

仙童半導(dǎo)體

30V P-Channel PowerTrench MOSFET

文件：65.65 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel Logic Level PowerTrench MOSFET

文件：172.6 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 30-V (D-S) MOSFET

文件：1.00476 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ；Package：SO-8；P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m

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ONSEMI

安森美半導(dǎo)體

P-Channel 30-V (D-S) MOSFET

文件：1.00471 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel 30-V (D-S) MOSFET

文件：579.62 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P 溝道，PowerTrench? MOSFET，-30V，-8.8A，20mΩ

此P溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大程度地降低通態(tài)電阻而定制的。? 該器件非常適用于筆記本電腦和便攜式電池組中的電源管理和負(fù)載開關(guān)應(yīng)用。 ?最大rDS(on) = 20mΩ（VGS = –10V且ID = –8.8A時）\n?最大rDS(on) = 35mΩ（VGS = –4.5V且ID = –6.7A時）\n?擴(kuò)展了VGSS范圍(-25V)，適合電池應(yīng)用\n?HBM ESD保護(hù)等級為±3.8KV典型值（注3）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力\n?終端是符合RoHS標(biāo)準(zhǔn)的無鉛產(chǎn)品;

ONSEMI

安森美半導(dǎo)體

P-Channel PowerTrench? MOSFET

General Description\nThis P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance.\nThis device is well suited for Power Management and load switching applications common in Notebook Computers an ■ Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A\n■ Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A\n■ Extended VGSS range (-25V) for battery applications\n■ HBM ESD protection level of ±3.8KV typical (note 3)\n■ High performance trench technology for extremely low rDS(on)\n■ High power and current hand;

ONSEMI

安森美半導(dǎo)體

P 溝道 PowerTrench? MOSFET -30V，-8.8A，20m?

此 P 溝道 MOSFET 采用飛兆先進(jìn)的 Power Trench? 工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通電阻而定制的。 該器件非常適合筆記本電腦和便攜電池組中的電源管理和負(fù)載開關(guān)應(yīng)用。 ?最大 rDS(on)= 20 m? （VGS = -10 V、ID= -8.8 A）\n?VGS = -4.5V且ID = -6.7A時，最大rDS(on) = 35m? \n?擴(kuò)展了VGSS范圍(-25V)，適合電池應(yīng)用\n?HBM ESD保護(hù)等級為±3.8KV典型值（注3）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n?高功率和高電流處理能力\n?終端是符合 RoHS 標(biāo)準(zhǔn)的無鉛產(chǎn)品\n?符合 AEC Q101;

ONSEMI

安森美半導(dǎo)體