N-Channel PowerTrench MOSFET

Features ? rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 8.9A ? Qg(tot) = 31nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? Optimized efficiency at high frequencies ? UIS Capability (Single Pulse and Repetitive Pulse) Applications ? Primary switch for Isolated DC/DC converters ?

文件：628.37 Kbytes 頁(yè)數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，80V，8.9A，16mΩ

N-Channel PowerTrench? MOSFET 80 V, 8.9 A, 16 mΩ ?rDS(ON) = 14mΩ（典型值），VGS =10V，ID = 8.9A\n?Qg(tot) = 31nC（典型值），VGS = 10V\n?低米勒電荷\n?低Qrr體二極管\n?優(yōu)化高頻率時(shí)的效率\n?UIS能力（單脈沖和重復(fù)脈沖）以前的開(kāi)發(fā)類(lèi)型82663;

ONSEMI

安森美半導(dǎo)體

N-Channel 100-V (D-S) MOSFET

Application ? LED Backiighting ? Synchronous Rectifiers for SMPS. ? Power management ? PWM Application |

文件：2.94104 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

N-Channel 20-V (D-S) MOSFET

文件：890.54 Kbytes 頁(yè)數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

EPITAXIAL PLANAR NPN TRANSISTOR

FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : ICand ICP. Higher Efficiency Leading to Less Heat Generation.

文件：60.12 Kbytes 頁(yè)數(shù)：3 Pages

KEC

KEC(Korea Electronics)

Dual Full-Bridge Piezo Driver with 900mA Boost Converter

文件：161.46 Kbytes 頁(yè)數(shù)：12 Pages

LINER

凌力爾特