80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 4.0 A, 80 V RDS(ON) = 70 m? @ VGS = 10 V RDS(ON) = 80 m? @ VGS = 6 V ? Low gate charge (

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FAIRCHILD

仙童半導體

80V N溝道PowerTrench? MOSFET

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進DC/DC轉(zhuǎn)換器整體功效而設計的。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 因此，這是一款更易于驅(qū)動且更安全（在高頻段也是如此）的MOSFET，可實現(xiàn)具有更高總效率的DC/DC電源設計。 ?4.0 A，80 V\n?RDS(ON) = 70 mΩ @ VGS = 10 V\n?RDS(ON) = 80 mΩ @ VGS = 6 V\n?低柵極電荷（13nC典型值）\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力;

ONSEMI

安森美半導體

Glass Passivated Single-Phase Bridge Rectifier

文件：598.99 Kbytes 頁數(shù)：3 Pages

NELLSEMI

尼爾半導體

Glass Passivated Single-Phase Bridge Rectifier

文件：595.57 Kbytes 頁數(shù)：3 Pages

NELLSEMI

尼爾半導體

SINGLE PHASE BRIDGE

Description A range of extremely compact, encapsulated single phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications. Features ■ Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal c

文件：270.15 Kbytes 頁數(shù)：6 Pages

IRF