isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=88A@ TC=25℃ ·Drain Source Voltage- : VDSS=660V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無錫固電

N-Channel PowerTrench MOSFET

文件：673.33 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導體

絲印：FDPF035N06B；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 88 A, 3.5 m

Description This N?Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on?state resistance while maintaining superior switching performance. Features ? RDS(on) = 2.91 m (Typ.)@ VGS = 10 V, ID = 88 A ? Low FOM RDS(on)*QG

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ONSEMI

安森美半導體

N-Channel PowerTrench? MOSFET

This N-Channel MOSFET is produced using ON Semiconductor’sadvancedPowerTrench?processthathasbeentailoredtominimizetheon-stateresistancewhilemaintaining\nsuperior switching performance. ? Low FOM RDS(on)*QG\n? Low Reverse Recovery Charge, Qrr\n? Soft Reverse Recovery Body Diode\n? Enables Highly Efficiency in Synchronous Rectification\n? Fast Switching Speed;

ONSEMI

安森美半導體

N-Channel PowerTrench? MOSFET

This N-Channel MOSFET is produced using ON Semiconductor’sadvancedPowerTrench?processthathasbeentailoredtominimizetheon-stateresistancewhilemaintaining\nsuperior switching performance. ? Low FOM RDS(on)*QG\n? Enables Highly Efficiency in Synchronous Rectification\n? Low Reverse Recovery Charge, Qrr\n? Soft Reverse Recovery Body Diode\n? Soft Reverse Recovery Body Diode\n? Fast Switching Speed\n? Enables Highly Efficiency in Synchronous Rectification\n? Fast Switching Speed;

ONSEMI

安森美半導體