絲?。?strong>FDP2532；Package：TO-220；N-Channel PowerTrench? MOSFET 150 V, 79 A, 16 mΩ

Features ? RDS(on) = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A ? QG(tot) = 82 nC ( Typ.) @ VGS = 10 V ? Low Miller Charge ? Low Qrr Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) Applications ? Consumer Appliances ? Synchronous Rectification ? Battery Protection Circuit ?

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N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features ? rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 33A ? Qg(tot) = 86nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Formerly developmental type 82884 Applications ? DC/DC conve

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isc N-Channel MOSFET Transistor

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N 溝道，PowerTrench? MOSFET，150V，79A，16mΩ

N-Channel PowerTrench? MOSFET 150 V, 79 A, 16 mΩ ?RDS(ON) = 14mΩ（典型值），VGS = 10V，ID = 33A\n?Qg(tot) = 86nC （典型值），VGS = 10V\n?低米勒電荷\n?低 Qrr體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合AEC Q101，以前的開(kāi)發(fā)類型為82884;

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