N-Channel PowerTrench? MOSFET 75V, 164A, 4.7m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? RDS(on) = 3.8m? ( Typ.)@ VGS = 10V, ID = 80A ? Fast switc

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

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ISC

無錫固電

N 溝道，PowerTrench? MOSFET，75V，164A，4.7mΩ

該 N 溝道 MOSFET 采用飛兆半導(dǎo)體的 PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 3.8m? （典型值）@ VGS = 10V, ID = 80A\n?快速開關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

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KEC

KEC(Korea Electronics)