isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 164A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/045n10a/marking.html">045N10A；Package：TO-220；100 V N-Channel MOSFET

? Fast switching speed ? Low gate charge, QG=54 nC (typical) ? High performance channel technology can achieve very low RDS(on). ? High power and high current handling capacity ? Meet RoHS standards ?VDS=100V ?ID(at VGS=10V)=100A ?RDS(ON) (at VGS=10V)

文件：1.73694 Mbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

N-Channel PowerTrench? MOSFET 100V, 164A, 4.5m

文件：751.27 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，100V，164A，4.5mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 3.8mΩ（典型值）@ VGS = 10V, ID = 100A\n?快速開關(guān)速度\n?低柵極電荷 QG = 54nC （典型值）\n?高性能溝道技術(shù)可實現(xiàn)極低的 RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體