N-Channel PowerTrench? MOSFET 60V, 195A, 3.1m

文件：748.44 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，60V，195A，3.1mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 2.67mΩ（典型值）@ VGS = 10V, ID = 100A\n?低 FOM RDS(on)*QG\n?低反向恢復(fù)電荷，Qrr = 78nC\n?反向恢復(fù)軟體二極管\n?使能高效同步整流\n?快速開關(guān)速度\n?100% 經(jīng)過 UIL 測試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The G030N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.91 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The G030N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03394 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 m, 19 A

文件：252.45 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體