isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=265A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.35 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-Channel PowerTrench? MOSFET 60V, 265A, 2.5m廓

文件：600.22 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，Power Trench? MOSFET，60V，265A，2.5mΩ

該 N 溝道 MOSFET 采用飛兆半導(dǎo)體的 PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 1.9m? （典型值）@ VGS = 10V, ID = 75A\n?快速開關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：674.69 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AMA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters l Synchronous Rectification

文件：948.09 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AQ uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：911.88 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體