N-Channel PowerTrench? MOSFET 100V, 144A, 5.5m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? RDS(on) = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A ?

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =130A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =105A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.3 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =96A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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N-Channel PowerTrench? MOSFET

Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A ? Fast switch

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isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220 packaging ? Low switching loss ? Ultra low gate charge ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operationz ? APPLICATIONS ? Switching applications ? AC-DC converters ? LED lighting ? Unin

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =75A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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N-Channel PowerTrench MOSFET 60V, 75A, 10.5m?

Features ? rDS(ON) = 9.5m? (Typ.), VGS = 10V, ID = 75A ? Qg(tot) = 28nC (Typ.), VGS = 10V ? Low Miller Charge ? Low Qrr Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? Motor / Body Load Control ? ABS Systems ? Powertrain Management

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?

Description UniFET? II MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

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