60V P-Channel Logic Level PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features ? –1.25 A, –60 V. RDS(ON)= 0.170 ?@ VGS= –10 V RDS(ON)= 0.230 ?@ VGS= –4.5 V ?Fast switching spe

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FAIRCHILD

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60V P-Channel Logic Level PowerTrench MOSFET

ONSEMI

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絲?。?a target="_blank" title="Marking" href="/618p/marking.html">618P；Package：SOT-23；60V P-Channel Power MOSFET

Application ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift

文件：3.48411 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

60V P-Channel Logic Level PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features ? –1.25 A, –60 V. RDS(ON)= 0.170 ?@ VGS= –10 V RDS(ON)= 0.230 ?@ VGS= –4.5 V ?Fast switching spe

文件：385.09 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

60V，P 溝道，PowerTrench? MOSFET，-1.25A，170mΩ

該60V P溝道MOSFET采用飛兆高壓PowerTrench工藝制成。 已針對電源管理應(yīng)用進行了優(yōu)化。 ?–1.25 A, –60 V. RDS(ON) = 0.200Ω @ VGS = –10 V, RDS(ON) = 0.230Ω @ VGS = –4.5 V\n? RDS(ON) = 0.200Ω @ VGS = –10 V\n? RDS(ON) = 0.230Ω @ VGS = –4.5 V\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)。;

ONSEMI

安森美半導(dǎo)體