Single P-Channel PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well sui

文件：231.67 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Single P-Channel MOSFET

Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. higher power handling capability. VDS (V) = -30V D= -2A (VGS=10V) RDS(ON)

文件：376.95 Kbytes 頁(yè)數(shù)：5 Pages

UMW

友臺(tái)半導(dǎo)體

Single P-Channel PowerTrenchTM MOSFET

ONSEMI

安森美半導(dǎo)體

絲印：360；Package：SOT-23；Single P-Channel MOSFET

Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. higher power handling capability. VDS (V) = -30V D= -2A (VGS=10V) RDS(ON)

文件：376.95 Kbytes 頁(yè)數(shù)：5 Pages

UMW

友臺(tái)半導(dǎo)體

絲印：360；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of i

文件：618.69 Kbytes 頁(yè)數(shù)：5 Pages

EVVOSEMI

翊歐

Single P-Channel PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well sui

文件：231.67 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/360/marking.html">360；Package：SOT-23；Single P-Channel, PowerTrench MOSFET

文件：259.11 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

PowerTrench MOSFET，單 P 溝道

此P溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持低柵極電荷以獲得卓越開(kāi)關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開(kāi)關(guān)的低電壓和電池供電應(yīng)用。 ?-2 A，-30 V\n?RDS(on) = 80 mΩ @ VGS = -10 V\n?RDS(on) = 125 mΩ @ VGS = -4.5 V\n?低柵極電荷（6.2nC，典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率版本的工業(yè)標(biāo)準(zhǔn)SOT-23封裝。 相同的SOT-23引腳，可將功率處理能力提高30%。;

ONSEMI

安森美半導(dǎo)體