Single P-Channel, PowerTrench

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ –1.3 A, –30

文件：118.89 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-1.3 A (VGS =-10V) ● RDS(ON)

文件：1.22738 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/52ap/marking.html">52AP；Package：SOT-23；P-Channel 30 V (D-S) MOSFET

Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.

文件：448.76 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/52ap/marking.html">52AP；Package：SOT-23；P-Channel 30 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High

文件：356.75 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

Single P-Channel, PowerTrench MOSFET

文件：123.56 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-1.3 A (VGS =-10V) ● RDS(ON)

文件：1.56336 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

Single P-Channel, PowerTrench MOSFET

文件：123.56 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel MOSFET

文件：1.0468 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

P-Channel MOSFET

文件：1.58312 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

單 P 溝道，PowerTrench? MOSFET，-30V，-1.3A，180mΩ

此P溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導(dǎo)通阻抗并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 這些器件非常適合需要在很小尺寸的表面貼裝封裝中實現(xiàn)低線內(nèi)功率損耗的低電壓和電池供電應(yīng)用。 ?-1.3A，-30V\n?RDS(ON) = 180 mΩ @ VGS = -10V\n?-1.1A，-30V\n?RDS(ON) = 300 mΩ @ VGS = -4.5V\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率版本的工業(yè)標(biāo)準(zhǔn)SOT-23封裝。 相同的SOT-23引腳，可將功率處理能力提高30%。;

ONSEMI

安森美半導(dǎo)體