Single P-Channel, Logic Level, PowerTrench MOSFET

General Description This P -Channel Logic Level MOSFET is produced using FairchildSemiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. Feature s · –2A, 20

文件：273.55 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Single P-Channel, Logic Level, PowerTrench? MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited f

文件：312.81 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design

文件：406.48 Kbytes 頁數(shù)：3 Pages

UMW

友臺半導(dǎo)體

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design APPLICATION ※ Battery protection ※ Load switch ※ Battery management

文件：351.63 Kbytes 頁數(shù)：3 Pages

EVVOSEMI

翊歐

Single P-Channel, Logic Level, PowerTrench?MOSFET

文件：211.6 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Single P-Channel, Logic Level, PowerTrench?MOSFET

文件：211.6 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 20-V (D-S) MOSFET

文件：1.039829 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

單 P 溝道，邏輯電平，PowerTrench? MOSFET，-20V，-2A，70mΩ

此P溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導(dǎo)通阻抗并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 這些器件非常適合負載開關(guān)、功率管理、電池充電電路和DC/DC轉(zhuǎn)換等便攜式電子應(yīng)用。 ?-2A，20V RDS(ON) = 70 mΩ @ VGS = -4.5 VRDS(ON) = 70 mΩ @ VGS = -4.5 V\n?低柵極電荷（7.2nC典型值）\n? RDS(ON) = 70 mΩ @ VGS = -4.5 V\n?高功率版本的工業(yè)標準SOT-23封裝。 相同的SOT-23引腳，可將功率處理能力提高30%。\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)。\n? RDS(ON) = 110 mΩ @ VGS = -2.5 V;

ONSEMI

安森美半導(dǎo)體