| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FDN338 | P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features · –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS = 文件：85.19 Kbytes 頁數(shù)：4 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FDN338 | P-Channel 20-V(D-S) MOSFET General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter 文件：2.74912 Mbytes 頁數(shù)：5 Pages | TUOFENG 拓鋒半導(dǎo)體 | TUOFENG | |
FDN338 | LV POWER MOSFET (P-CH) | BGSEMI | BGSEMI | |
FDN338 | P-Channel Logic Level Enhancement Mode Field Effect Transistor | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
絲?。?a target="_blank" title="Marking" href="/338/marking.html">338；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter 文件：572.58 Kbytes 頁數(shù)：2 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
SOT-23 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET 文件：601.84 Kbytes 頁數(shù)：2 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
P-Channel 20-V(D-S) MOSFET Application ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift 文件：1.7249 Mbytes 頁數(shù)：3 Pages | TECHPUBLIC 臺(tái)舟電子 | TECHPUBLIC | ||
P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features · –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS = 文件：85.19 Kbytes 頁數(shù)：4 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
20 V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected]= 115m? RDS(ON), [email protected], [email protected]= 155m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 文件：1.91559 Mbytes 頁數(shù)：4 Pages | HTSEMI 金譽(yù)半導(dǎo)體 | HTSEMI | ||
P-Channel 20-V (D-S) MOSFET 文件：1.039819 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI |
技術(shù)參數(shù)
- Id (A)：
-1.6
- Rds：
0.115
- Package：
SOT-23
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
SOT-23 |
45000 |
只做全新原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
FAIRCHILD/仙童 |
2450+ |
SOT-23 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
fai |
25+ |
sot-23 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
國(guó)產(chǎn)MOS |
2010 |
SOT-23 |
50000 |
全新原裝進(jìn)口自己庫存優(yōu)勢(shì) |
詢價(jià) | ||
FAIRCHILD |
2015+ |
SOT-23 |
28989 |
專業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
FAIRCHILD/FSC/仙童飛兆半 |
24+ |
SOT-23 |
57200 |
新進(jìn)庫存/原裝 |
詢價(jià) | ||
FSC |
24+ |
SOT23 |
200 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
原廠 |
23+ |
sot-23 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
FSC |
25+ |
SOT-23 |
24000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
FAIRCHILD |
24+ |
SOT-23 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) |
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