P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features ? –20 V, –1.5 A. Rds(on)= 125 m?@ Vgs= –4.5

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FAIRCHILD

仙童半導體

絲印：308；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

Features VDS (V) = -20V RDS(ON)

文件：446.7 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/wt1x/marking.html">WT1X；Package：SOT-23；P-Channel Mosfet

Product Summary Vbss= -20V, Ip=-2.8A RDS(on) 80m [email protected]( Typ) [email protected] (Typ ) ' High Power and current handing capability Lead free product is acquired Surface Mount Package

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TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/308/marking.html">308；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

Applications Power management Load switch Battery protection Features VDS (V) = -20V RDS(ON)

文件：331.64 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

P 溝道，2.5V 指定，PowerTrench? MOSFET，-20V，-1.5A，125mΩ

此P溝道2.5V額定MOSFET采用穩(wěn)固柵極版本的飛兆先進的PowerTrench工藝生產(chǎn)。 它已針對柵極驅(qū)動電壓范圍(2.5V – 12V)廣泛的電源管理應用進行了優(yōu)化。 ?–20 A，–1.5 V。\n?RDS(ON)= 125 mΩ @ VGS = –4.5 V\n?RDS(ON) = 190 mΩ @ VGS = –2.5 V\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?SuperSOT?-3提供低RDS(ON)，并且在同樣的尺寸下，功率處理能力比SOT23高出30%;

ONSEMI

安森美半導體