P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features ? –2.6 A, –12 V. RDS(ON) = 40 m? @ VGS = –4.5 V RDS(ON) = 50 m? @ VGS = –2.5 V RDS(ON) = 80 m? @ VGS = –

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FAIRCHILD

仙童半導(dǎo)體

絲印：306；P-Channel 1.8V Specified PowerTrench? MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications ? Battery management ? Load switch ? Battery protection Features ? –2.6 A, –12 V. RDS(ON) = 4

文件：247.88 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：306；Package：SOT-23；P-Channel 1.8 V (D-S) MOSFET

Features ? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V ? Fast switching speed ? High performance trench technology for extremely low RDS(ON) ? SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT

文件：468.58 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/306/marking.html">306；Package：SOT-23；P-Channel 1.8 V (D-S) MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications ? Battery management ? Load switch ? Battery protection Features ? –2.6 A, –12 V. RDS(ON)

文件：342.58 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

絲印：306P；Package：SOT-23；Single P-Channel PowerTrench MOSFET

文件：1.00134 Mbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

P-Channel 20-V (D-S) MOSFET

文件：1.039829 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

低壓N溝道增強(qiáng)型場效應(yīng)管

\n -12V P-Channel Enhancemen t ModeMOSFET\nFeatures\n? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V\nRDS(ON) = 50 mΩ @ VGS = –2.5 V\nRDS(ON) = 80 mΩ @ VGS = –1.8 V\n? Fast switching speed\nApplications\n? Battery management\n? Load switch\n? Battery protection

Puolop

迪浦

P 溝道，1.8V 指定，PowerTrench? MOSFET，-12V，-2.6A，40mΩ

此P溝道1.8V額定MOSFET是采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)的穩(wěn)固柵極版本。 它已針對電池的電源管理應(yīng)用進(jìn)行了優(yōu)化。 ?-2.6 A，-12 V\n?RDS(ON) = 40 mΩ @ VGS = -4.5 V\n?RDS(ON) = 50 mΩ @ VGS = -2.5 V\n?RDS(ON) = 80 mΩ @ VGS = -1.8 V\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?SuperSOT?-3提供低RDS(ON)，并且在同樣的尺寸下，功率處理能力比SOT23高出30%;

ONSEMI

安森美半導(dǎo)體

P-Channel MOSFET

XW

芯微半導(dǎo)體