P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage(2.5V – 12V). Features ? –20 V, –2.4 A. Rds(on)= 0.055 ?@

文件：103.44 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V Specified PowerTrench? MOSFET

General Description\nThis P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management\napplications with a wide range of gate drive voltage(2.5V – 12V). ? –20 V, –2.4 A. Rds(on)= 0.055 ?@ Vgs= –4.5 V\nRds(on)= 0.080 ?@ Vgs= –2.5 V\n?Fast switching speed\n?High performance trench technology for extremely low Rds(on)\n?SuperSOT -3 provides low Rds(on) and 30% higher power handling capability than SOT23 in the same footprint;

ONSEMI

安森美半導(dǎo)體

絲印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

Features ? –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) = 80 mΩ @ VGS = –2.5 V ? Fast switching speed ? High performance trench technology for extremely low RDS(ON) ? SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT23 in the same footprint

文件：309.77 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/302d/marking.html">302D；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Product Summary Vps = -20V,Ip = -3A Rosion)

文件：12.00579 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

General Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications ? Power management ? Load switch ? Battery protection Features ? –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) =

文件：295.31 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage(2.5V – 12V). Features ? –20 V, –2.4 A. Rds(on)= 0.055 ?@

文件：103.44 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Contains all support circuitry needed for the ADS1148/ADS1248

文件：1.83652 Mbytes 頁數(shù)：34 Pages

TI

德州儀器

Contains all support circuitry needed for the ADS1146/ADS1246

文件：2.33022 Mbytes 頁數(shù)：27 Pages

TI

德州儀器

P-Channel 20-V (D-S) MOSFET

文件：1.04078 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P 溝道 2.5V 指定 PowerTrench? MOSFET -20V，-2.4A，55mΩ

此P溝道2.5V額定MOSFET采用穩(wěn)固柵極版本的飛兆先進(jìn)的PowerTrench工藝生產(chǎn)。 它已針對柵極驅(qū)動電壓范圍(2.5V – 12V)廣泛的電源管理應(yīng)用進(jìn)行了優(yōu)化。 ?–20 A，–2.4 V。\n?RDS(ON) = 0.055 mΩ @ VGS = –4.5 V\n?RDS(ON) = 0.080 mΩ @ VGS = –2.5 V\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?SuperSOT?-3提供低RDS(ON)，并且在同樣的尺寸下，功率處理能力比SOT23高出30%;

ONSEMI

安森美半導(dǎo)體