30V N溝道PowerTrench? MOSFET

FDMS8880設計用于最大限度地降低功率轉換應用中的損耗。 先進的硅和封裝技術完美融合，在保持卓越開關性能的同時，提供了最低的rDS(on)。 ?VGS = 10 V，ID = 13.5 A時，最大rDS(on) = 8.5 mΩ\n?VGS = 4.5 V，ID = 10.9 A時，最大rDS(on) = 13.0 mΩ\n?先進的封裝和硅技術完美融合，實現了低rDS(on) 和高效率\n?MSL1耐用封裝設計\n?符合RoHS標準;

ONSEMI

安森美半導體

N-Channel PowerTrench? MOSFET 30 V, 21 A, 8.5 m廓

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FAIRCHILD

仙童半導體

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

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ISC

無錫固電

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on)and fast switching speed. Features rDS

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FAIRCHILD

仙童半導體