N 溝道，Power Trench? MOSFET，40V，49A，2.2mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進的Power Trench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?VGS = 10V，ID = 25A時，Max rDS(on) = 2.2mΩ\n?VGS = 4.5V，ID = 21.7A時，最大rDS(on) = 3.0 mΩ\n?先進的封裝和硅技術(shù)完美融合，實現(xiàn)了低rDS(on)\n?MSL1耐用封裝設(shè)計\n?100%經(jīng)過UIL測試\n?符合RoHS標(biāo)準;

ONSEMI

安森美半導(dǎo)體

N-Channel Power Trench? MOSFET 40V, 49A, 2.2m廓

文件：323.1 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

80 Amp Rectifier 60 to 100 Volts Schottky Barrier

Features ? Metal of siliconrectifier, majonty carrier conducton ? Guard ring for transient protection ? Low power loss high efficiency ? High surge capacity, High current capability

文件：667.95 Kbytes 頁數(shù)：3 Pages

MCC

ALARM CLOCK (CLOCK RADIO.ETC)

LM8460 ALARM CLOCK (CLOCK RADIO, ETC.) LM8471 RHYTHM PATTERN GENERATOR FOR ELECTRONIC ORGAN LM8523 COUNTER FOR TAPE RECORDER

文件：112.45 Kbytes 頁數(shù)：1 Pages

SANYO

三洋

High-Capacity Wi-Fi 6E Tri-Band Access Point

Features ? Qualcomm? IPQ8076A [email protected] Processor ? Wi-Fi 6E Tri-Band Access Point ? 4x4 MU-MIMO in 2.4GHz, 5GHz and 6GHz ? Comply with IEEE 802.11a/b/g/n/ac/ax ? 12 Internal Antennas for optimal Wi-Fi performance ? BLE 5.1 for IoT management ? Multi-speed GbE WAN port (1/2.5/5/10GbE

文件：595.36 Kbytes 頁數(shù)：2 Pages

LANNER

立端科技