雙 N 溝道，PowerTrench? MOSFET，30V

該器件包含兩個(gè)專用MOSFET，采用獨(dú)特的雙功率56封裝。 該器件設(shè)計(jì)用于提供一個(gè)最佳效率和PCB使用的同步降壓功率級(jí)。 低開關(guān)損耗“高端”MOSFET通過(guò)一個(gè)低導(dǎo)通損耗“低端”SyncFET互補(bǔ)。 ? Q1： N溝道\n?VGS = 2 V且ID = 10.1 A時(shí)，最大rDS(on) = 20.0 m? \n?VGS = 4.5 V且ID = 7.5 A時(shí)，最大rDS(on) = 30.0 m? Q2： N溝道\n?VGS = 2 V且ID = 12.4 A時(shí)，最大rDS(on) = 11.2 m? \n?VGS = 4.5 V且ID = 10.9 A時(shí)，最大rDS(on) = 14.2 m? ;

ONSEMI

安森美半導(dǎo)體

Dual N-Channel PowerTrench? MOSFET Q1: 30 V, 10.1 A, 20.0 m廓 Q2: 30 V, 12.4 A, 11.2 m廓

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FAIRCHILD

仙童半導(dǎo)體

7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays

Description The 7.6 mm (0.3 inch) and 10.9 mm (0.43 inch) LED seven segment displays are designed for viewing distances up to 3 metres (10 feet) and 5 metres (16 feet). These devices use an industry standard size package and pinouts. All devices are available as either common anode or common cath

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AVAGO

安華高

HIGH SPEED 512 x 4 PROM

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HARRIS

Chip withstand voltage of 50V, recommended safe voltage 5-40V

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HMSEMI

華之美半導(dǎo)體