絲?。?strong>FDMS5672；Package：Power56；N-Channel UltraFET Trench? MOSFET 60V, 22A, 11.5mΩ

Features Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant General Description UItraFET devices combine characteristics that enable benchmark e

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N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm

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N-Channel UltraFET Trench? MOSFET

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N 溝道，UltraFET Trench? MOSFET，60V，22A，11.5mΩ

UItraFET器件結(jié)合了各種特性，可在功率轉(zhuǎn)換應(yīng)用中提供基準(zhǔn)效率。 由于針對(duì)rDS(on)、低ESR、低總電荷和米勒柵極電荷進(jìn)行了優(yōu)化，這些器件是高頻DC-DC轉(zhuǎn)換器的理想選擇。 ?最大rDS(on) = 11.5mΩ（VGS = 10V, ID = 10.6A）\n?VGS = 6V，ID = 8A時(shí)，Max rDS(on) = 16.5mΩ\n?VGS = 10V時(shí)，Typ Qg = 32nC\n?低密勒電荷\n?優(yōu)化高頻率時(shí)的效率\n?符合 RoHS 標(biāo)準(zhǔn);

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N-Channel UltraFET Trench? MOSFET

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