P-Channel PowerTrench? MOSFET -30 V, -18 A, 20 m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench? process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

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FAIRCHILD

仙童半導(dǎo)體

P 溝道 PowerTrench? MOSFET -30V，-18A，20mΩ

這一P溝道MOSFET器件采用飛兆半導(dǎo)體的高級(jí)PowerTrench?工藝生產(chǎn)，該工藝專(zhuān)為最大限度地降低通態(tài)電阻而量身定制。 該器件非常適用于筆記本電腦和便攜式電池組中的電源管理和負(fù)載開(kāi)關(guān)應(yīng)用。 ?在VGS = -10 V且ID = -9.0 A時(shí)，最大值rDS(on) = 20 m? \n?在VGS = -4.5 V且ID = -6.5 A時(shí)，最大值rDS(on) = 37 m? \n?為電池應(yīng)用提供了擴(kuò)展的VGSS電壓范圍(-25 V)\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?HBM ESD保護(hù)級(jí)別>7 KV典型值（注4）\n?100%經(jīng)過(guò)UIL測(cè)試\n?終端是符合RoHS標(biāo)準(zhǔn)的無(wú)鉛產(chǎn)品;

ONSEMI

安森美半導(dǎo)體

P-Channel Logic Level PowerTrench??OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features ? –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

文件：264.93 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features ? –8.8 A, –30 V RDS(ON) = 20 mW @ VGS

文件：637.39 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

30V P-Channel PowerTrench MOSFET

文件：65.65 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體