功率 MOSFET 80V，單 N 溝道，136A，3.5mΩ，采用 Power 56 封裝。

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. ? Shielded Gate MOSFET Technology\n? Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 45 A\n? Max rDS(on) = 5.1 mΩ at VGS = 4.5 V, ID = 36 A\n? 50% Lower Qrr than Other MOSFET Suppliers\n? Lowers Switching Noise/EMI\n? MSL1 Robust Package Design\n? 100% UIL Tested\n? RoHS Compliant\n? Logic Level dr;

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絲?。?strong>FDMS3D5N08LC；Package：PQFN8；MOSFET, N-Channel Shielded Gate, POWERTRENCH

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安森美半導(dǎo)體

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3 m, 135 A

Features ? Low QRR, Soft Recovery Body Diode ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Synchronous Rectification (SR) in DC?DC and AC?DC ? P

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安森美半導(dǎo)體

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features ? Low QRR, Soft Recovery Body Diode ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Synchronous Rectificati

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安森美半導(dǎo)體