N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm

General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features ■ Max rDS(on) = 23m? at VGS

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，UltraFET? Trench MOSFET，100V，22A，23mΩ

UItraFET器件結(jié)合了各種特性，可在功率轉(zhuǎn)換應(yīng)用中提供基準(zhǔn)效率。 由于針對rDS(on)、低ESR、低總電荷和米勒柵極電荷進(jìn)行了優(yōu)化，這些器件是高頻DC到DC轉(zhuǎn)換器的理想選擇。 ?VVGS = 10V，ID = 7.4A時，最大RDS(on) = 23 mΩ\n?VGS = 6V，ID = 6.6A時，最大RDS(on) = 29 mΩ\n?VGS = 10V時，Qg= 31nC（典型值）\n?低米勒電荷\n?優(yōu)化高頻率時的效率\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench MOSFET 105V, 41A, 33m?

Features ? rDS(ON) = 25m? (Typ.), VGS = 10V, ID = 41A ? Qg(tot) = 28nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? Optimized efficiency at high frequencies ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

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ISC

無錫固電

N-Channel PowerTrench MOSFET 100V, 7.5A, 22m?

Features ? rDS(ON) = 19m? (Typ.), VGS = 10V, ID = 7.5A ? Qg(tot) = 28nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? Optimized efficiency at high frequencies ? UIS Capability (Single Pulse and Repetitive Pulse) Applications ? DC/DC converters and Off-Line UPS ? Distributed

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FAIRCHILD

仙童半導(dǎo)體