25V非對稱雙N溝道MOSFET PowerTrench?功率級

該器件在雙PQFN封裝中包括兩個專用N溝道MOSFET。 該開關(guān)節(jié)點通過內(nèi)部連接，能夠為同步降壓轉(zhuǎn)換器提供簡單的布局和布線。 控制MOSFET (Q1)和同步SyncFET (Q2)旨在提供優(yōu)化的功效。 ? Q1: N-ChannelMax rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 AMax rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A\n? Q2: N-ChannelMax rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 AMax rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A\n? Low inductance packaging shortens rise/fall times, resulting in lower switching ;

ONSEMI

安森美半導(dǎo)體

PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET

文件：394.62 Kbytes 頁數(shù)：12 Pages

FAIRCHILD

仙童半導(dǎo)體

Off-Line Digital Power Controller for LED Driver

文件：378.61 Kbytes 頁數(shù)：6 Pages

DIALOGDialog Semiconductor

戴樂格

MAGNETIC POWDER CORES

文件：35.7387 Mbytes 頁數(shù)：42 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features ? 650-V 270-mΩ GaN power FET ? Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control ? Current-sense emulation with high bandwidth and high accuracy ? Cycle-by-cycle overcurrent protection ? Overtemperature protection with FLT pin reporting

文件：1.3389 Mbytes 頁數(shù)：30 Pages

TI

德州儀器