PowerTrench Power Stage

General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide

文件：377.98 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導(dǎo)體

PowerTrench? 功率級

該器件在雙PQFN封裝中包括兩個專用N溝道MOSFET。 該開關(guān)節(jié)點通過內(nèi)部連接，能夠為同步降壓轉(zhuǎn)換器提供簡單的布局和布線。 控制MOSFET (Q1)和同步SyncFET (Q2)旨在提供優(yōu)化的功效。 ? Q1： N溝道\n?最大值 rDS(on) = 5.7 mΩ（VGS = 4.5 V, ID = 16 A 時）Q2： N溝道\n?低電感封裝縮短了上升/下降時間，從而減少了開關(guān)損耗\n?MOSFET集成可實現(xiàn)降低電路電感以及開關(guān)節(jié)點振鈴噪聲的優(yōu)化布局\n?符合RoHS標準;

ONSEMI

安森美半導(dǎo)體

Molded thermoset plastic housing with cover

文件：74.48 Kbytes 頁數(shù)：4 Pages

HONEYWELL

霍尼韋爾

IrDA? Data Compliant 115.2 kb/s 3 V to 5 V Infrared Transceiver

文件：1.5286 Mbytes 頁數(shù)：26 Pages

AVAGO

安華高

N-Channel Enhancement Mode MOSFET

Features · 100V/160A RDS(ON) = mW (typ.) @ VGS =10V · 100% avalanche tested · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Switching application · Power Management for Inverter Systems

文件：1.13277 Mbytes 頁數(shù)：10 Pages

HOOYI

后羿半導(dǎo)體