N-Channel Dual CoolTM PowerTrench? SyncFETTM 30 V, 49 A, 2.6 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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FAIRCHILD

仙童半導(dǎo)體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數(shù)：2 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道雙 CoolTM 56 PowerTrench? SyncFETTM

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 PowerTrench?工藝生產(chǎn)。先進(jìn)的硅技術(shù)和Dual Cool?封裝技術(shù)完美融合，可在提供最小rDS(on)的同時(shí)通過極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。該器件具有高效單片肖特基體二極管的新增優(yōu)點(diǎn)。 Dual Cool? 頂側(cè)冷卻PQFN封裝\n VGS = 10V，ID = 28A時(shí)，最大rDS(on) = 2.6mΩ\n 最大值 rDS(on) = 3.3 mΩ（VGS = 4.5 V, ID = 22 A 時(shí)）\n 通態(tài)電阻 rDS(on)極低的高性能技術(shù)\n SyncFET肖特基體二極管\n 符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Switching Application

Switching Application (Bias Resistor Built In) ? Switching circuit, Inverter, Interface circuit, Driver Circuit ? Built in bias Resistor (R1=47K?, R2=22K?) ? Complement to FJX4008R

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FAIRCHILD

仙童半導(dǎo)體

NPN Epitaxial Silicon Transistor

文件：258.26 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

NPN Epitaxial Silicon Transistor

文件：258.26 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體