N-Channel Dual CoolTM Power Trench? SyncFETTM 30 V, 49 A, 1.9 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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FAIRCHILD

仙童半導(dǎo)體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，Dual Cool?，Power Trench? SyncFET?，30V，90A，1.9mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)。 先進(jìn)的硅技術(shù)和Dual Cool? 封裝技術(shù)完美融合，可在提供最小rDS(on)的同時(shí)通過極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。 該器件可被額外作為一個(gè)有效的單片肖特基體二極管使用。 Dual Cool? 頂側(cè)冷卻PQFN封裝\n VGS = 10 V，ID = 30 A時(shí)，最大rDS(on) = 1.9 mΩ\n VGS = 4.5 V，ID = 26 A時(shí)，最大rDS(on) = 2.7 mΩ\n 高性能技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n SyncFET肖特基體二極管\n 符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Switching Application

Switching Application (Bias Resistor Built In) ? Switching circuit, Inverter, Interface circuit, Driver Circuit ? Built in bias Resistor (R1=10K?, R2=47K?) ? Complement to FJX4006R

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FAIRCHILD

仙童半導(dǎo)體

NPN Epitaxial Silicon Transistor

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FAIRCHILD

仙童半導(dǎo)體

N-Ch 30V Fast Switching MOSFETs

Description The FKBA3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA3006 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approve

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FETEK

臺(tái)灣東沅