N 溝道，屏蔽門極，PowerTrench? MOSFET，80 V，147 A，3.1 mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. ? Low RDS(on) and Qg\n? Minimizes conduction and switching losses\n? Very Low Qrr\n? reduces EMI and Voltage Overshoot\n? Lowers switching noise / EMI\n? 100% UIL tested;

ONSEMI

安森美半導(dǎo)體

絲印：FDMS003N08C；Package：Power56；N-Channel Shielded Gate PowerTrench? MOSFET

文件：1.45846 Mbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

文件：268.63 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

文件：268.63 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：269.15 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體