Dual N-Channel PowerTrench? MOSFET 40V, 87A, 2.6mΩ

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density. ? Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 21 A\n? Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 17 A\n? Ideal for Flexible Layout in Secondary Side Synchronous Rectification\n? 100% UIL Tested\n? Termination is Lead-free and RoHS compliant;

ONSEMI

安森美半導(dǎo)體

Dual N-Channel PowerTrench MOSFET

文件：612.89 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 40V, 277A, 2.2m廓

文件：773.37 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 277A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.2mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features ? Metal of siliconrectifier, majonty carrier conducton ? Guard ring for transient protection ? Low power loss high efficiency ? High surge capacity, High current capability

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MCC